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| to ? 92 1. emitter 2. collector 3. base to-92 plastic-encapsulate transistors 2SC1674 transistor (npn) features z general purpose switch ing and amplification. maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 20 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 4 v collector cut-off current i cbo v cb =30v,i e =0 0.1 a collector cut-off current i ceo v ce =20v,i b =0 0.1 a emitter cut-off current i ebo v eb =3v,i c =0 0.1 a dc current gain h fe v ce =6v, i c =1ma 40 180 collector-emitter saturation voltage v ce(sat) i c =10ma,i b =1ma 0.3 v base-emitter voltage v be v ce =6v, i c =1ma 0.65 0.77 v collector output capacitance c ob v cb =6v,i e =0, f=1mhz 1.3 pf transition frequency f t v ce =6v,i c =1ma 400 mhz classification of h fe rank y gr bl range 40-80 60-120 90-180 symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 4 v i c collector current 0.02 a p c collector power dissipation 250 mw r ja thermal resistance from junction to ambient 500 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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